1/8 may 2000 am1517-025 rf & microwave transistors satellite communications applications so42 hermetically sealed order code am1517-025 branding 1517-25 ? refractory/gold metallization ? emitter site ballasted ? :1 vswr capability ? low thermal resistance ? input/output matching ? overlay geometry ? metallic/ceramic hermetic package ? p out = 25 w min. with 8.5 db gain description the am1517-025 power transistor is designed specifically for satellite communications applica- tions in the 1.5 - 1.7 frequency range. the device is capable of withstanding any mis- match load condition at any phase angle (vswr :1) under full rated conditions. the unit is an overlay, emitter site ballasted, geometry utilizing a refractory/gold metallization system. the am1517-025 is supplied in the ampac tm hermetic/ceramic package with internal input/ output matching structures. pin connection 1 4 3 2 1. collector 2. base 3. emitter 4. base absolute maximum ratings (t case = 25 0 c) symbol parameter value unit p diss power dissipation* ( tc 50 0 c) 45 w i c device current* 2.5 a v cc collector-supply voltage* 30 v t j junction temperature 200 0 c t stg storage temperature -65 to +200 0 c thermal data r th(j-c) junction-case thermal resistance* 3.3 0 c/w * applies only to rated rf amplifier operation
am1517-025 2/8 electrical specification (t case = 25 0 c) static symbol parameter min. typ. max. unit bv cbo i c = 8 ma i e = 0 ma 45 --- --- v bv ebo i e = 8 ma i c = 0 ma 3.0 --- --- v i cbo v cb = 28 v --- --- 2 ma h fe v ce = 5 v i c = 1.6 a 15 --- 150 --- dynamic symbol parameter min. typ. max. unit p out f = 1.5 - 1.7 ghz p in = 3.5 w v cc = 28 v 25 --- --- w h d f = 1.5 - 1.7 ghz p in = 3.5 w v cc = 28 v 50 -- --- % g p f = 1.5 - 1.7 ghz p in = 3.5 w v cc = 28 v 8.5 --- --- db note: am1517 series vary p in to achieve p out ; performance guaranteed in 50 mhz increments. alpha-suffix added to am1517 p/n desigates band segment. m - 1620 - 1660 mhz s - 1625 - 1675 mhz ref. 1015989d
3/8 am1517-025 collector efficiency vs case temperature output power & collector efficiency vs input power output power vs case temperature output power & collector efficiency vs collector voltage gain vs case temperature typical performance
am1517-025 4/8 impedance data typical collector load impedance z cl z in typical input impedance p out = 25 w v cc = 28 v z o = 50 ohms p out = 25 w v cc = 28 v z o = 50 ohms frequency mhz z in ( w ) z cl ( w ) 1.5 ghz 8.5 + j 13.0 12.0 - j 4.0 1.6 ghz 8.0 + j 12.5 7.5 - j 4.5 1.7 ghz 9.0 + j 12.0 9.0 - j 6.0
5/8 am1517-025 rev. 1022332d test circuit schematic test circuit component part list c1,c2 0.4-2.5pf giga trim variabile capacitor c3 100pf surface mount ceramic chip capacitor c4 1000pf resin sealed # 8-35 threaded feedthru capacitor c5 0.1 m f/50v ceramic molded radial lead capacitor l1 3 turn air wound coil #26awg, id. 0.070 [1.77] bus bar wire l2 3 turn air wound coil #26awg, id. 0.070 [1.77] bus bar wire board alumina ceramic substrate, high polished 1.0 sq [25.40], 0.025 [0.63] thk. e r=9.6, 200 microinches au, both sides
am1517-025 6/8 test circuit test circuit photomaster 1 inch 0.824 inches 0.773 inches
7/8 am1517-025 so42 (.400 x .400 2/l herm w/flg) mechanical data mm inch min. typ. max min. typ. max a 0.51 0.76 .020 .030 b 6.35 .250 c 9.55 10.06 .376 .396 d 2.79 3.30 .110 .130 e 10.03 10.34 .395 .407 f 4.90 .193 g 11.43 .450 h 3.18 .125 i 16.26 16.76 .640 .660 j 22.61 23.11 .890 .910 k 10.03 10.54 .395 .415 l 0.10 0.18 .004 .006 m 1.32 1.83 .052 .072 n 2.84 3.35 .112 .132 p 5.84 .230 q 22.35 23.37 .880 .920 1011416b dim.
am1517-025 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics ? 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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